- Patent Title: Method for locating open circuit failure point of test structure
-
Application No.: US17896336Application Date: 2022-08-26
-
Publication No.: US11852674B2Publication Date: 2023-12-26
- Inventor: Cheng Wu , Shuqing Duan , Jinde Gao
- Applicant: Shanghai Huali Microelectronics Corporation
- Applicant Address: CN Shanghai
- Assignee: Shanghai Huali Microelectronics Corporation
- Current Assignee: Shanghai Huali Microelectronics Corporation
- Current Assignee Address: CN Shanghai
- Agency: Banner & Witcoff, Ltd.
- Priority: CN 2111392016.8 2021.11.19
- Main IPC: G01R31/28
- IPC: G01R31/28 ; H05K1/02 ; H05K3/00

Abstract:
The present application discloses a method for locating an open circuit failure point of a test structure, which includes the following steps: step 1: providing a sample formed with a test structure, a first metal layer pattern and a second metal layer pattern of the test structure forming a series resistor structure through each via; step 2: performing a first active voltage contrast test to the sample to show an open circuit point and making a first scratch mark at an adjacent position of the open circuit point; step 3: forming a coating mark at the first scratch mark on the sample; step 4: performing a second active voltage contrast test to the sample to show the open circuit point and locating a relative position of the open circuit point by using a position of the coating mark as a reference position.
Public/Granted literature
- US20230160951A1 Method for Locating Open Circuit Failure Point of Test Structure Public/Granted day:2023-05-25
Information query