Invention Grant
- Patent Title: Backside etch process for transparent silicon oxide technology
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Application No.: US17987157Application Date: 2022-11-15
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Publication No.: US11852800B2Publication Date: 2023-12-26
- Inventor: Jacob Becker , Jon Burnsed
- Applicant: L3Harris Technologies, Inc.
- Applicant Address: US FL Melbourne
- Assignee: L3HARRIS TECHNOLOGIES, INC.
- Current Assignee: L3HARRIS TECHNOLOGIES, INC.
- Current Assignee Address: US FL Melbourne
- Agency: Workman Nydegger
- Main IPC: G02B23/12
- IPC: G02B23/12 ; G02B27/01 ; H10K59/32 ; H10K71/00 ; H10K71/20 ; H10K102/00

Abstract:
Increasing transparency of one or more micro-displays. A method includes attaching a transparent cover to at least a portion of a semiconductor wafer. The at least a portion of the semiconductor wafer includes the one or more micro-displays. The one or more micro-displays include one or more active silicon areas. The method further includes, after the transparent cover has been attached to the at least a portion of the semiconductor wafer, removing silicon between one or more of the active silicon areas, causing the one or more micro-displays to have a transparency of at least 50%.
Public/Granted literature
- US20230085741A1 BACKSIDE ETCH PROCESS FOR TRANSPARENT SILICON OXIDE TECHNOLOGY Public/Granted day:2023-03-23
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