- Patent Title: Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device
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Application No.: US17325627Application Date: 2021-05-20
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Publication No.: US11852964B2Publication Date: 2023-12-26
- Inventor: Tsutomu Shoki , Takahiro Onoue
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: JP 16072287 2016.03.31 JP 16190721 2016.09.29
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/84 ; G03F1/42 ; G03F1/26 ; G03F1/44 ; G03F7/20

Abstract:
A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
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