Methods and systems for IC photomask patterning are described. In some embodiments, a method includes inserting a dummy region in an IC design layout, the IC design layout includes an active region, and the active region and the dummy region is separated by a first distance. The method further includes performing one or more operations on the IC design layout, and the active region and the dummy region is separated by a second distance substantially less than the first distance. The method further includes performing a dummy region size reduction on the IC design layout to increase the second distance to a third distance substantially greater than the second distance, and the third distance is substantially greater than a minimum feature size to be patterned by a photolithography tool. The method further includes forming a photomask using the IC design layout.