A state detection circuit of an anti-fuse memory cell includes a first switching element, having a first end connected to a power supply, a second end connected to a first node, and a control end connected to a controller; an anti-fuse memory cell array including a plurality of anti-fuse memory cell sub-arrays, bit lines of the plurality of anti-fuse memory cell sub-arrays being all connected to the first node, and word lines of the plurality of anti-fuse memory cell sub-arrays being all connected to the controller; and a comparator, having a first input end connected to the first node, and a second input end connected to a reference voltage.