Invention Grant
- Patent Title: Method of manufacturing semiconductor element
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Application No.: US17298961Application Date: 2019-02-25
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Publication No.: US11854856B2Publication Date: 2023-12-26
- Inventor: Masahiro Fujikawa , Kunihiko Nishimura , Shuichi Hiza , Eiji Yagyu
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: XSENSUS LLP
- International Application: PCT/JP2019/007036 2019.02.25
- International Announcement: WO2020/174529A 2020.09.03
- Date entered country: 2021-06-02
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L21/304 ; H01L21/67

Abstract:
An object is to provide a technique capable of suppressing defectives in semiconductor elements. A manufacturing method of a semiconductor device includes a step of forming a laminated body in which an adhesive protective layer, an adhesive layer, a peeling layer, and a support substrate are disposed in this order on a first main surface of the semiconductor substrate, a step of removing the semiconductor substrate other than a portion where a plurality of circuit elements are formed, a step of bonding the portion where the circuit elements are formed to a transfer substrate, a step of removing the peeling layer, the support substrate and the adhesive layer, a step of removing the adhesive protective layer by chemical treatment, and a step of dividing the plurality of circuit elements.
Public/Granted literature
- US20220059386A1 METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT Public/Granted day:2022-02-24
Information query
IPC分类: