Invention Grant
- Patent Title: Semiconductor structure with material modification and low resistance plug
-
Application No.: US17321292Application Date: 2021-05-14
-
Publication No.: US11854871B2Publication Date: 2023-12-26
- Inventor: Mrunal A. Khaderbad , Akira Mineji
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: HAYNES AND BOONE, LLP
- The original application number of the division: US16380662 2019.04.10
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L29/40 ; H01L23/522 ; H01L23/532 ; H01L29/417 ; H01L21/3115
Abstract:
A semiconductor device that includes a semiconductor substrate, a dielectric layer over the semiconductor substrate, a conductive feature over the semiconductor substrate and buried in the dielectric layer, and a metal plug over the conductive feature and buried in the dielectric layer, where the dielectric layer has a hydrophobic sidewall facing the metal plug.
Public/Granted literature
- US20210280459A1 SEMICONDUCTOR STRUCTURE WITH MATERIAL MODIFICATION AND LOW RESISTANCE PLUG Public/Granted day:2021-09-09
Information query
IPC分类:
