Invention Grant
- Patent Title: Semiconductor module and semiconductor device
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Application No.: US17466266Application Date: 2021-09-03
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Publication No.: US11854950B2Publication Date: 2023-12-26
- Inventor: Hideo Komo , Arata Iizuka , Takeshi Omaru
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- The original application number of the division: US16340156
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L25/07 ; H01L23/00 ; H01L23/36 ; H01L23/48 ; H01L25/18 ; H01L23/31
Abstract:
The present invention is intended to provide a semiconductor module and a semiconductor device that are compatible with various rated currents. A semiconductor module includes a lead frame, and a semiconductor element joined with the lead frame. The lead frame includes a first joining structure and a second joining structure. The first joining structure includes a void part as a part at which the lead frame does not exist, and the second joining structure includes a void part as a part at which the lead frame does not exist. Each of the first joining structure and the second joining structure has a shape such that one of the first joining structure and the second joining structure complements at least part of the void part of the other assuming that the first joining structure and the second joining structure are overlapped.
Public/Granted literature
- US20210398885A1 SEMICONDUCTOR MODULE AND SEMICONDUCTOR DEVICE Public/Granted day:2021-12-23
Information query
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