Invention Grant
- Patent Title: Shielding structures
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Application No.: US17854840Application Date: 2022-06-30
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Publication No.: US11855022B2Publication Date: 2023-12-26
- Inventor: Chih-Fan Huang , Hui-Chi Chen , Kuo-Chin Chang , Chien-Huang Yeh , Hong-Seng Shue , Dian-Hau Chen , Yen-Ming Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: HAYNES AND BOONE, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/48 ; H01L23/498 ; H01L23/522

Abstract:
Semiconductor device packages and method are provided. A semiconductor device package according to the present disclosure includes a substrate including a first region, a passive device disposed over the first region of the substrate, a contact pad disposed over the passive device, a passivation layer disposed over the contact pad, a recess through the passivation layer, and an under-bump metallization (UBM) layer. The recess exposes the contact pad and the UBM layer includes an upper portion disposed over the passivation layer and a lower portion disposed over a sidewall of the recess. A projection of the upper portion of the UBM layer along a direction perpendicular to the substrate falls within an area of the contact pad.
Public/Granted literature
- US20220328440A1 SHIELDING STRUCTURES Public/Granted day:2022-10-13
Information query
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