Invention Grant
- Patent Title: Electrostatic discharge (ESD) array with back end of line (BEOL) connection in a carrier wafer
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Application No.: US17150782Application Date: 2021-01-15
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Publication No.: US11855076B2Publication Date: 2023-12-26
- Inventor: Tao-Yi Hung , Wun-Jie Lin , Jam-Wem Lee , Kuo-Ji Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H02H9/04

Abstract:
An electrostatic discharge (ESD) protection apparatus and method for fabricating the same are disclosed herein. In some embodiments, the ESD protection apparatus, comprises: an internal circuit patterned in a device wafer and electrically coupled between a first node and a second node, an array of electrostatic discharge (ESD) circuits patterned in a carrier wafer, where the ESD circuits are electrically coupled between a first node and a second node and configured to protect the internal circuit from transient ESD events, and where the device wafer is bonded to the carrier wafer.
Public/Granted literature
- US20220231010A1 AN ELECTROSTATIC DISCHARGE (ESD) ARRAY WITH BACK END OF LINE (BEOL) CONNECTION IN A CARRIER WAFER Public/Granted day:2022-07-21
Information query
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