Invention Grant
- Patent Title: Substrate processing apparatus and substrate processing method
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Application No.: US16856626Application Date: 2020-04-23
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Publication No.: US11856655B2Publication Date: 2023-12-26
- Inventor: Hirofumi Yamaguchi , Yoshiaki Sasaki , Yuichi Nishimori , Atsushi Tanaka
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JP 19084002 2019.04.25
- Main IPC: H05B1/02
- IPC: H05B1/02 ; H01L21/677 ; H01L21/67 ; H01L21/687 ; H05B3/28

Abstract:
A substrate processing apparatus includes: a chamber having a container including at least one substrate-heating region and at least one substrate-cooling region; a heating mechanism configured to heat a first substrate in the at least one substrate-heating region; a cooling mechanism configured to cool a second substrate in the at least one substrate-cooling region while the first substrate is being heated; and a partition provided in the container and configured to separate the at least one substrate-heating region and the at least one substrate-cooling region from each other in terms of heat and pressure.
Public/Granted literature
- US20200344850A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD Public/Granted day:2020-10-29
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