Invention Grant
- Patent Title: Systems and methods for high yield and high throughput production of graphene
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Application No.: US18075509Application Date: 2022-12-06
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Publication No.: US11858813B2Publication Date: 2024-01-02
- Inventor: Vig Sherrill , Mira Baraket , Richard Philpott
- Applicant: General Graphene Corporation
- Applicant Address: US TN Knoxville
- Assignee: General Graphene Corporation
- Current Assignee: General Graphene Corporation
- Current Assignee Address: US TN Knoxville
- Agency: LUEDEKA NEELY GROUP, P.C.
- Main IPC: C01B32/182
- IPC: C01B32/182 ; C23C16/02 ; C23C16/26 ; C01B32/186 ; C01B32/184 ; B01J19/24 ; C01B32/05 ; B01J19/18 ; B82Y40/00

Abstract:
Systems and method for producing graphene on a substrate are described. Certain types of exemplar systems include lateral arrangements of a substrate gas scavenging environment and an annealing environment. Certain other types of exemplar systems include lateral arrangements of a graphene producing environment and a cooling environment, which cools the graphene produced on the substrate. Yet other types of exemplar systems include lateral arrangements of a localized annealing environment, localized graphene producing environment and a localized cooling environment inside the same enclosure.
Certain type of exemplar methods for producing graphene on a substrate include scavenging a first portion of the substrate and preferably, contemporaneously annealing a second portion of the substrate. Certain other type of exemplar methods for producing graphene include novel annealing techniques and/or implementing temperature profiles and gas flow rate profiles that vary as a function of lateral distance and/or cooling graphene after producing it.
Certain type of exemplar methods for producing graphene on a substrate include scavenging a first portion of the substrate and preferably, contemporaneously annealing a second portion of the substrate. Certain other type of exemplar methods for producing graphene include novel annealing techniques and/or implementing temperature profiles and gas flow rate profiles that vary as a function of lateral distance and/or cooling graphene after producing it.
Public/Granted literature
- US20230212011A1 SYSTEMS AND METHODS FOR HIGH YIELD AND HIGH THROUGHPUT PRODUCTION OF GRAPHENE Public/Granted day:2023-07-06
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