Invention Grant
- Patent Title: Heteroalkylcyclopentadienyl indium-containing precursors and processes of using the same for deposition of indium-containing layers
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Application No.: US16941088Application Date: 2020-07-28
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Publication No.: US11859283B2Publication Date: 2024-01-02
- Inventor: Antoine Bruneau , Takashi Ono , Christian Dussarrat
- Applicant: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Applicant Address: FR Paris
- Assignee: L'Air Liquide Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges Claude
- Current Assignee: L'Air Liquide Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges Claude
- Current Assignee Address: FR Paris
- Agent Yan Jiang
- Main IPC: C23C16/18
- IPC: C23C16/18 ; C23C16/455 ; C07F5/00
Abstract:
Methods for forming an Indium-containing film by a vapor deposition method using a heteroalkylcyclopentadienyl Indium (I) precursor having a general formula:
In[R1R2R3R4CpL1] or
In[CpL1L2y]
wherein Cp represents a cyclopentadienyl ligand; R1 to R4 are each independently H, C1-C4 linear, branched or cyclic alkyls; L1 and L2 are each independently a substituent bonded to the Cp ligand and consisting of an alkyl chain containing at least one heteroatom, such as Si, Ge, Sn, N, P, B, Al, Ga, In, O, S, Se, Te, F, Cl, Br, I; and y=1-4. Examplary heteroalkylcyclopentadienyl Indium (I) precursors include In(Cp(CH2)3NMe2) or In(CpPiPr2).
In[R1R2R3R4CpL1] or
In[CpL1L2y]
wherein Cp represents a cyclopentadienyl ligand; R1 to R4 are each independently H, C1-C4 linear, branched or cyclic alkyls; L1 and L2 are each independently a substituent bonded to the Cp ligand and consisting of an alkyl chain containing at least one heteroatom, such as Si, Ge, Sn, N, P, B, Al, Ga, In, O, S, Se, Te, F, Cl, Br, I; and y=1-4. Examplary heteroalkylcyclopentadienyl Indium (I) precursors include In(Cp(CH2)3NMe2) or In(CpPiPr2).
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