Invention Grant
- Patent Title: Material analysis method
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Application No.: US17736107Application Date: 2022-05-04
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Publication No.: US11859965B2Publication Date: 2024-01-02
- Inventor: Shang-Chi Wang , Wen-Ching Hsu , Chia-Chi Tsai , I-Ching Li
- Applicant: GlobalWafers Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: GlobalWafers Co., Ltd.
- Current Assignee: GlobalWafers Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW 0116086 2021.05.04
- Main IPC: G01N23/00
- IPC: G01N23/00 ; G01B15/04 ; G01N23/20

Abstract:
A material analysis method is provided. A plurality of wafers processed from a plurality of ingots are measured by a measuring instrument to obtain an average of a bow of each of the wafers processed from the ingots and a plurality of full widths at half maximum (FWHM) of each of the wafers. Key factors respectively corresponding to the ingots are calculated according to the FWHM of the wafers. A regression equation is obtained according to the key factors and the average of the bows.
Public/Granted literature
- US20220357152A1 MATERIAL ANALYSIS METHOD Public/Granted day:2022-11-10
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