Invention Grant
- Patent Title: Semiconductor devices including crack sensor
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Application No.: US17689489Application Date: 2022-03-08
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Publication No.: US11860116B2Publication Date: 2024-01-02
- Inventor: Jong Su Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: WILLIAM PARK & ASSOCIATES LTD.
- Priority: KR 20210136148 2021.10.13
- Main IPC: H01L23/522
- IPC: H01L23/522 ; G01N27/20 ; H01L21/66 ; H01L49/02

Abstract:
A semiconductor device includes a target layer disposed on a substrate, and a crack sensor for detecting a crack generated in the target layer. The crack sensor includes a first conductive pattern positioned at a bottom surface of the target layer, a second conductive pattern positioned on a top surface of the target layer, the top surface being opposite to the bottom surface of the target layer, a plurality of resistors, and nodes. The plurality of resistors are connected in parallel to each other through the first conductive pattern and the second conductive pattern. Each of the plurality of resistors is disposed to substantially penetrate the target layer.
Public/Granted literature
- US20230110075A1 SEMICONDUCTOR DEVICES INCLUDING CRACK SENSOR Public/Granted day:2023-04-13
Information query
IPC分类: