Invention Grant
- Patent Title: Integrated circuit with biofets and fabrication thereof
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Application No.: US17007973Application Date: 2020-08-31
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Publication No.: US11860120B2Publication Date: 2024-01-02
- Inventor: Tung-Tsun Chen , Yi-Hsing Hsiao , Jui-Cheng Huang , Yu-Jie Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G01N27/414
- IPC: G01N27/414 ; G01N33/569 ; H01L21/762

Abstract:
An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.
Public/Granted literature
- US20220065812A1 INTEGRATED CIRCUIT WITH BIOFETS AND FABRICATION THEREOF Public/Granted day:2022-03-03
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