Invention Grant
- Patent Title: Target control in extreme ultraviolet lithography systems using aberration of reflection image
-
Application No.: US17751545Application Date: 2022-05-23
-
Publication No.: US11860544B2Publication Date: 2024-01-02
- Inventor: Ting-Ya Cheng , Han-Lung Chang , Shi-Han Shann , Li-Jui Chen , Yen-Shuo Su
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Studebaker & Brackett PC
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G02B7/182 ; H05G2/00 ; G03F7/00
Abstract:
A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.
Public/Granted literature
- US20220283507A1 TARGET CONTROL IN EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEMS USING ABERRATION OF REFLECTION IMAGE Public/Granted day:2022-09-08
Information query
IPC分类:
