Invention Grant
- Patent Title: Storage system and data writing method thereof
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Application No.: US17657812Application Date: 2022-04-04
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Publication No.: US11861232B2Publication Date: 2024-01-02
- Inventor: Kangling Ji
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2111531858.7 2021.12.14
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
Embodiments of the present disclosure relate to the technical field of semiconductors and provide a storage system and a data writing method thereof. The storage system is configured to: enter a write data copy mode in response to a write-copy enable signal; if at least two groups of data in multiple groups of data exported from multiple data ports are a same in the write data copy mode, define the at least two groups of data as a category; generate an identification signal that is used to indicate a data copy; transmit one group of data in the category to an interface of a memory array; and disconnect a transmission path between a data port corresponding to another group of data in the category and another interface of the memory array, wherein the memory array, in response to the write-copy enable signal and the identification signal.
Public/Granted literature
- US20230185486A1 STORAGE SYSTEM AND DATA WRITING METHOD THEREOF Public/Granted day:2023-06-15
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