Invention Grant
- Patent Title: Multi-deck memory device including buffer circuitry under array
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Application No.: US17941799Application Date: 2022-09-09
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Publication No.: US11862238B2Publication Date: 2024-01-02
- Inventor: Tomoharu Tanaka
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C11/4096 ; G11C16/16 ; G06F13/16 ; G11C11/4094

Abstract:
Some embodiments include apparatuses and methods of using the apparatuses. One of the apparatuses includes a substrate, a first deck including first memory cell strings located over the substrate, a second deck including second memory cell strings and located over the first deck, first data lines located between the first and second decks and coupled to the first memory cell strings, second data lines located over the second deck and coupled to the second memory cell strings, and first and second circuitries. The first and second data lines extending in a direction from a first portion of the substrate to a second portion of the substrate. The first buffer circuitry is located in the first portion of the substrate under the first memory cell strings of the first deck and coupled to the first data lines. The second buffer circuitry is located in the second portion of the substrate under the first memory cell strings of the first deck and coupled to the second data lines.
Public/Granted literature
- US20230005524A1 MULTI-DECK MEMORY DEVICE INCLUDING BUFFER CIRCUITRY UNDER ARRAY Public/Granted day:2023-01-05
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