Invention Grant
- Patent Title: Stressing algorithm for solving cell-to-cell variations in phase change memory
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Application No.: US17885462Application Date: 2022-08-10
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Publication No.: US11862244B2Publication Date: 2024-01-02
- Inventor: Jau-Yi Wu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C29/08 ; H10B63/00
Abstract:
A process is provided to trim PCRAM cells to have consistent programming curves. Initial programming curves of PCRAM cells are measured. A target programming curve is set up for the PCRAM cells. Each PCRAM cell is then modulated individually to meet the target programming curve.
Public/Granted literature
- US20220383952A1 STRESSING ALGORITHM FOR SOLVING CELL-TO-CELL VARIATIONS IN PHASE CHANGE MEMORY Public/Granted day:2022-12-01
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