Invention Grant
- Patent Title: Semiconductor memory having both volatile and non-volatile functionality and method of operating
-
Application No.: US17960441Application Date: 2022-10-05
-
Publication No.: US11862245B2Publication Date: 2024-01-02
- Inventor: Yuniarto Widjaja
- Applicant: Zeno Semiconductor, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Law Office of Alan W. Cannon
- The original application number of the division: US13903923 2013.05.28
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C14/00 ; H01L21/28 ; G11C11/404 ; G11C16/04 ; H01L27/105 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/788 ; H01L29/792 ; H10B12/00 ; H10B41/30 ; H10B41/40 ; H10B41/42 ; H10B43/30 ; H10B43/40 ; G11C16/22 ; H01L29/06 ; H01L21/84 ; H01L27/12

Abstract:
Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping layer for storing data as non-volatile memory, the device operating as volatile memory when power is applied to the device, and the device storing data from the volatile memory as non-volatile memory when power to the device is interrupted.
Public/Granted literature
- US20230045758A1 Semiconductor Memory Having Both Volatile and Non-Volatile Functionality and Method of Operating Public/Granted day:2023-02-09
Information query