Invention Grant
- Patent Title: Memory chip and memory system
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Application No.: US17661553Application Date: 2022-04-30
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Publication No.: US11862290B2Publication Date: 2024-01-02
- Inventor: Shu-Liang Ning
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2111491022.9 2021.12.08
- Main IPC: G11C7/14
- IPC: G11C7/14 ; G11C7/10 ; G01R31/3185 ; G11C17/12 ; G11C7/22

Abstract:
A memory chip stores a characterization parameter for characterizing a process corner of the memory chip, the memory chip further has a reference voltage with an adjustable value, the value of the reference voltage is adjustable based on the characterization parameter, and the memory chip adjusts, based on the reference voltage, a delay from reading out data from a memory cell to outputting the data through a data port.
Public/Granted literature
- US20230178124A1 MEMORY CHIP AND MEMORY SYSTEM Public/Granted day:2023-06-08
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