Invention Grant
- Patent Title: Sputtering target
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Application No.: US17087333Application Date: 2020-11-02
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Publication No.: US11862443B2Publication Date: 2024-01-02
- Inventor: Toshiaki Kuroda , Mikio Takigawa
- Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP 17064985 2017.03.29 JP 17183878 2017.09.25
- The original application number of the division: US15935605 2018.03.26
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34 ; C23C14/35 ; C23C14/14 ; C23C14/16

Abstract:
A sputtering target comprising a target material, wherein a sputtering face of the target material has a ramp provided to reduce a thickness of the target material at a position where erosion concentrates most intensively during sputtering.
Public/Granted literature
- US20210057196A1 SPUTTERING TARGET Public/Granted day:2021-02-25
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