Invention Grant
- Patent Title: Apparatuses and methods of controlling hydrogen supply in memory device
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Application No.: US17366972Application Date: 2021-07-02
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Publication No.: US11862554B2Publication Date: 2024-01-02
- Inventor: Shigeru Sugioka , Keizo Kawakita
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H10B12/00
Abstract:
Apparatuses and methods for controlling hydrogen supply in manufacturing memory devices are described. An example apparatus includes: a first capacitor disposed above a substrate; a hydrogen supply film above the first capacitor; a second capacitor above the hydrogen supply film; and a barrier film between the hydrogen supply film and the second capacitor. The hydrogen supply film provides hydrogen and/or hydrogen ions. The barrier film is hydrogen-impermeable.
Public/Granted literature
- US20230005837A1 APPARATUSES AND METHODS OF CONTROLLING HYDROGEN SUPPLY IN MEMORY DEVICE Public/Granted day:2023-01-05
Information query
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