Invention Grant
- Patent Title: IC having electrically isolated warpage prevention structures
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Application No.: US17512958Application Date: 2021-10-28
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Publication No.: US11862576B2Publication Date: 2024-01-02
- Inventor: Christlyn Faith Hobrero Arias , Rafael Jose Lizares Guevara
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Ronald O. Neerings; Frank D. Cimino
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31 ; H01L21/71

Abstract:
Disclosed aspects include a semiconductor die including a substrate having a semiconductor surface including circuitry. A top metal layer is above the semiconductor surface including top metal lines that are electrically connected through a metal stack including metal interconnects that electrically connect to the circuitry. The top metal lines are configured in a primary orientation that collectively represents at least 50% of a total length of the top metal lines in a first direction. The top metal layer includes bond pads exposed from a passivation layer. The metal features are positioned lateral to and not directly electrically connected to the top metal layer and/or are positioned on the passivation layer. At least a majority of a total area of the metal features is not over metal interconnects. The metal features have a length direction oriented in a second direction that is at least essentially perpendicular relative to the primary orientation.
Public/Granted literature
- US20230139898A1 IC HAVING ELECTRICALLY ISOLATED WARPAGE PREVENTION STRUCTURES Public/Granted day:2023-05-04
Information query
IPC分类: