Invention Grant
- Patent Title: Solid-state imaging device having through electrode provided therein and electronic apparatus incorporating the solid-state imaging device
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Application No.: US17374586Application Date: 2021-07-13
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Publication No.: US11862655B2Publication Date: 2024-01-02
- Inventor: Hideaki Togashi
- Applicant: SONY GROUP CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Sony Group Corporation
- Current Assignee: Sony Group Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross PC
- Priority: JP 13169553 2013.08.19
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L23/48 ; H01L21/768 ; H04N25/77 ; H04N25/79 ; H04N25/75
Abstract:
There is provided a solid-state imaging device including: one or more photoelectric conversion elements provided on side of a first surface of a semiconductor substrate; a through electrode coupled to the one or more photoelectric conversion elements, and provided between the first surface and a second surface of the semiconductor substrate; and an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate, in which the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode.
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