Invention Grant
- Patent Title: Backside incident-type imaging element
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Application No.: US17608212Application Date: 2020-07-03
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Publication No.: US11862659B2Publication Date: 2024-01-02
- Inventor: Masaharu Muramatsu , Shin-ichiro Takagi , Yasuhito Yoneta
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JP 19166268 2019.09.12
- International Application: PCT/JP2020/026253 2020.07.03
- International Announcement: WO2021/049140A 2021.03.18
- Date entered country: 2021-11-02
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N25/772 ; H04N25/778

Abstract:
A backside incident-type imaging element includes a semiconductor substrate having a front surface and a back surface on an opposite side from the front surface, a ground potential being applied to the semiconductor substrate, and a semiconductor layer formed on the front surface, in which the semiconductor layer has a first element part that includes a light receiving portion generating a signal charge according to incident light from a side of the back surface and outputs a signal voltage corresponding to the signal charge, and a second element part that includes an analog-digital converter converting the signal voltage output from the first element part into a digital signal.
Public/Granted literature
- US20220208809A1 BACKSIDE INCIDENT-TYPE IMAGING ELEMENT Public/Granted day:2022-06-30
Information query
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