Invention Grant
- Patent Title: Device for high voltage applications
-
Application No.: US17548624Application Date: 2021-12-13
-
Publication No.: US11862673B2Publication Date: 2024-01-02
- Inventor: Kwangsik Ko , Qiuyi Xu , Shajan Mathew
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: VIERING JENTSCHURA & PARTNER MBB
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/761 ; H01L29/66 ; H01L29/872 ; H01L29/40 ; H01L21/765

Abstract:
A device includes a buried oxide layer disposed on a substrate, a first region disposed on the buried oxide layer and a first ring region disposed in the first region. The first ring region includes a portion of a guardring. The device further includes a first terminal region disposed in the first ring region, a second ring region disposed in the first region and a second terminal region disposed in the second ring region. The first terminal region is connected to an anode and the second terminal region is connected to a cathode. The first region has a graded doping concentration. The first region, the second ring region and the second terminal region have a first conductivity type, and the first ring region and the first terminal region have a second conductivity type. The first conductivity type is different from the second conductivity type.
Public/Granted literature
- US20230187487A1 DEVICE FOR HIGH VOLTAGE APPLICATIONS Public/Granted day:2023-06-15
Information query
IPC分类: