Invention Grant
- Patent Title: Electrical isolation in pixel-array substrates using combination of doped semiconductor guard rings and overlapping isolation trenches
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Application No.: US16905625Application Date: 2020-06-18
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Publication No.: US11862678B2Publication Date: 2024-01-02
- Inventor: Yuanwei Zheng , Sing-Chung Hu , Gang Chen , Dyson Tai , Lindsay Grant
- Applicant: OmniVision Technologies, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: COZEN O'CONNOR
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L29/06

Abstract:
A pixel-array substrate includes a semiconductor substrate with a pixel array, a back surface, and a front surface, and a guard ring formed of a doped semiconductor, enclosing the pixel array, and extending into the semiconductor substrate from the front surface, the back surface forming a trench extending into the semiconductor substrate, the trench overlapping the guard ring. A method for reducing leakage current into a pixel-array includes doping a semiconductor substrate to form a guard ring that extends into the semiconductor substrate from a front surface, encloses a pixel array, excludes a periphery region, and resists a flow of electric current, and forming, into a back surface of the semiconductor substrate, a trench that penetrates into the back surface and overlaps the guard ring, the guard ring and the trench configured to resist the flow of electric current between the pixel array and the periphery region.
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Information query
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