Invention Grant
- Patent Title: Electrostatic discharge protection structure, nitride-based device having the same and method for manufacturing nitride-based device
-
Application No.: US17344159Application Date: 2021-06-10
-
Publication No.: US11862680B2Publication Date: 2024-01-02
- Inventor: Ning Xu , Wenbi Cai , Cheng Liu , Yuci Lin , Nientze Yeh
- Applicant: XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: HUNAN SAN'AN SEMICONDUCTOR CO., LTD.
- Current Assignee: HUNAN SAN'AN SEMICONDUCTOR CO., LTD.
- Current Assignee Address: CN Hunan
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: CN 2010543656.3 2020.06.15
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/06 ; H01L29/40 ; H01L29/66 ; H01L29/778 ; H01L29/20 ; H01L29/205
Abstract:
An electrostatic discharge protection structure for a nitride-based device having an active region, an electrostatic discharge protection region outside the active region for forming the electrostatic discharge protection structure, and a field plate formed in the active region is provided. The electrostatic discharge protection structure includes a channel layer, and a barrier layer, a first p-type nitride layer and a metal layer formed on the channel layer in such order. The metal layer is electrically connected to the field plate in the active region. A nitride-based device having the electrostatic discharge protection structure and a method for manufacturing a nitride-based device is also disclosed.
Public/Granted literature
Information query
IPC分类:
