Invention Grant
- Patent Title: Ultra-thin fin structure and method of fabricating the same
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Application No.: US17456799Application Date: 2021-11-29
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Publication No.: US11862683B2Publication Date: 2024-01-02
- Inventor: Sherry Li , Chia-Der Chang , Yi-Jing Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- The original application number of the division: US16837510 2020.04.01
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/02 ; H01L27/088 ; H01L29/165 ; H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L21/306 ; H01L21/8234 ; H01L21/762 ; H01L21/8238 ; H01L21/308
Abstract:
The present disclosure describes a method for forming ultra-thin fins with a tapered bottom profile for improved structural rigidity and gate control characteristics. The method includes forming a fin structure that includes an epitaxial layer portion and a doped region portion surrounded by an isolation region so that a top section of the epitaxial layer portion is above the isolation region. The method also includes depositing a silicon-based layer on the top portion of the epitaxial layer above the isolation region and annealing the silicon-based layer to reflow the silicon-based layer. The method further includes etching the silicon-based layer and the fin structure above the isolation region to form a first bottom tapered profile in the fin structure above the isolation region and annealing the fin structure to form a second bottom tapered profile below the first bottom tapered profile and above the isolation region.
Public/Granted literature
- US20220085167A1 ULTRA-THIN FIN STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2022-03-17
Information query
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