Invention Grant
- Patent Title: Integrated GaN power module
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Application No.: US17387093Application Date: 2021-07-28
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Publication No.: US11862688B2Publication Date: 2024-01-02
- Inventor: Ashish K. Sahoo , Brandon Pierquet , Derryk C. Davis , Javier Ruiz , John M. Brock
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L23/14
- IPC: H01L23/14 ; H01L29/20 ; H01L23/31 ; H01L23/36 ; H01L23/522 ; H01L23/532 ; H01L27/088
Abstract:
Integrated power modules according to the present technology may include a printed circuit board characterized by a first surface and a second surface. The integrated power modules may include one or more surface-mounted components coupled with the first surface of the printed circuit board. The integrated power modules may include a heat-transfer substrate. The integrated power modules may include one or more gallium nitride transistors coupled between and soldered to each of the second surface of the printed circuit board and the heat-transfer substrate. The integrated power modules may include one or more spacers coupled between and soldered to each of the printed circuit board and the heat-transfer substrate.
Public/Granted literature
- US20230030746A1 INTEGRATED GAN POWER MODULE Public/Granted day:2023-02-02
Information query
IPC分类:
