Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
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Application No.: US17473622Application Date: 2021-09-13
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Publication No.: US11862698B2Publication Date: 2024-01-02
- Inventor: Saya Shimomura , Hiroaki Katou , Toshifumi Nishiguchi
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy LLP
- Priority: JP 21037198 2021.03.09
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/40 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor device of embodiments includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a conductive portion, a first insulating portion, a gate electrode, a second insulating portion, and a third insulating portion. The first to third semiconductor regions are provided between the first electrode and the second electrode. The conductive portion includes a first conductive portion and a second conductive portion on the second electrode side and having a lower impurity concentration than the first conductive portion. The first insulating portion is provided between the first conductive portion and the first semiconductor region. The gate electrode is provided between the second semiconductor region and the second conductive portion. The second insulating portion is provided between the second conductive portion and the gate electrode. The third insulating portion is provided between the second semiconductor region and the gate electrode.
Public/Granted literature
- US20220293755A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2022-09-15
Information query
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