Invention Grant
- Patent Title: Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
-
Application No.: US17123727Application Date: 2020-12-16
-
Publication No.: US11862719B2Publication Date: 2024-01-02
- Inventor: Saptharishi Sriram , Thomas Smith , Alexander Suvorov , Christer Hallin
- Applicant: CREE, INC.
- Applicant Address: US NC Durham
- Assignee: Wolfspeed, Inc.
- Current Assignee: Wolfspeed, Inc.
- Current Assignee Address: US NC Durham
- Agency: BakerHostetler
- The original application number of the division: US16376596 2019.04.05
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/423 ; H01L29/66 ; H01L29/417 ; H01L29/40 ; H01L29/10
Abstract:
An apparatus includes a substrate. The apparatus further includes a group III-nitride buffer layer on the substrate; a group III-nitride barrier layer on the group III-nitride buffer layer, the group III-nitride barrier layer including a higher bandgap than a bandgap of the group III-nitride buffer layer. The apparatus further includes a source electrically coupled to the group III-nitride barrier layer; a gate electrically coupled to the group III-nitride barrier layer; a drain electrically coupled to the group III-nitride barrier layer; and a p-region being at least one of the following: in the substrate or on the substrate below said group III-nitride barrier layer.
Public/Granted literature
Information query
IPC分类:
