Invention Grant
- Patent Title: Transistor, integrated circuit, and manufacturing method of transistor
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Application No.: US17401315Application Date: 2021-08-13
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Publication No.: US11862726B2Publication Date: 2024-01-02
- Inventor: Hung-Chang Sun , Sheng-Chih Lai , Yu-Wei Jiang , Kuo-Chang Chiang , Tsuching Yang , Feng-Cheng Yang , Chung-Te Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H10B51/00
Abstract:
A transistor includes an insulating layer, a source region, a drain region, a channel layer, a ferroelectric layer, an interfacial layer, and a gate electrode. The source region and the drain region are respectively disposed on two opposite ends of the insulating layer. The channel layer is disposed on the insulating layer, the source region, and the drain region. The ferroelectric layer is disposed over the channel layer. The interfacial layer is sandwiched between the channel layer and the ferroelectric layer. The gate electrode is disposed on the ferroelectric layer.
Public/Granted literature
- US20230049651A1 TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR Public/Granted day:2023-02-16
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