Invention Grant
- Patent Title: Tunable DBR semiconductor laser
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Application No.: US17610519Application Date: 2019-05-30
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Publication No.: US11862935B2Publication Date: 2024-01-02
- Inventor: Takahiko Shindo , Naoki Fujiwara
- Applicant: Nippon Telegraph and Telephone Corporation
- Applicant Address: JP Tokyo
- Assignee: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
- Current Assignee: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Workman Nydegger
- International Application: PCT/JP2019/021618 2019.05.30
- International Announcement: WO2020/240794A 2020.12.03
- Date entered country: 2021-11-11
- Main IPC: H01S5/125
- IPC: H01S5/125 ; H01S5/026 ; H01S5/12

Abstract:
A 1.3 μm-band wavelength-tunable DBR laser in which a wavelength-tunable amount is extended is disclosed. The wavelength-tunable DBR laser according to an embodiment of the present invention is a wavelength-tunable DBR laser in which an active region having an optical gain and a DBR region including a diffraction grating are integrated monolithically and an oscillation wavelength is changed by injecting a current into the DBR region. At a boundary between a p-side clad layer and a core layer in the DBR region, an electron barrier layer being p-type doped and having a bandgap greater than in the p-side clad layer is further included. At a boundary between an n-side clad layer and the core layer in the DBR region, a hole barrier layer being n-type doped and having a bandgap greater than in the n-side clad layer is further included.
Public/Granted literature
- US20220216674A1 Tunable DBR Semiconductor Laser Public/Granted day:2022-07-07
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