Invention Grant
- Patent Title: Electrostatic discharge protection circuit
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Application No.: US17664910Application Date: 2022-05-25
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Publication No.: US11862965B2Publication Date: 2024-01-02
- Inventor: Qi'an Xu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2210224399.6 2022.03.07
- Main IPC: H02H9/02
- IPC: H02H9/02 ; H02H9/00

Abstract:
The present disclosure provides an electrostatic discharge protection circuit, a chip including a first pad and a second pad. The electrostatic discharge protection circuit includes a trigger unit and a discharge transistor. The trigger unit is connected between the first pad and the second pad, provided with a trigger terminal, and configured to generate a trigger signal when there is an electrostatic pulse on the first pad. The first pad is connected to a first voltage, the second pad is connected to a second voltage, and the first voltage is greater than the second voltage. The discharge transistor has a first terminal connected to the first pad, and a second terminal connected to the second pad, and discharges an electrostatic charge to the second pad when triggered by the trigger signal.
Public/Granted literature
- US20230283068A1 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT Public/Granted day:2023-09-07
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