Invention Grant
- Patent Title: MRAM fabrication and device
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Application No.: US17461132Application Date: 2021-08-30
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Publication No.: US11864467B2Publication Date: 2024-01-02
- Inventor: Jung-Tang Wu , Wu Meng Yu , Szu-Hua Wu , Chin-Szu Lee , Han-Ting Tsai , Yu-Jen Chien
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US16559207 2019.09.03
- Main IPC: H10N50/01
- IPC: H10N50/01 ; H01F41/34 ; G11C11/16 ; H01F10/32 ; H10B61/00 ; H10N50/80
Abstract:
A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
Public/Granted literature
- US20210391534A1 MRAM Fabrication and Device Public/Granted day:2021-12-16
Information query
