Semiconductor device with passivated magnetic concentrator
Abstract:
A described example includes: a semiconductor die including a Hall sensor arranged in a first plane that is parallel to a device side surface of the semiconductor die; a passivated magnetic concentrator including a magnetic alloy layer formed over the device side surface of the semiconductor die, the upper surface of the magnetic alloy layer covered by a layer of polymer material; a backside surface of the semiconductor die opposite the device side surface mounted to a die side surface of a die pad on a package substrate, the semiconductor die having bond pads on the device side surface spaced from the magnetic concentrator; electrical connections coupling the bond pads of the semiconductor die to leads of the package substrate; and mold compound covering the magnetic concentrator, the semiconductor die, the electrical connections, a portion of the leads, and the die side surface of the die pad.
Public/Granted literature
Information query
Patent Agency Ranking
0/0