Invention Grant
- Patent Title: Memory cell, method of forming the same, and semiconductor device having the same
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Application No.: US17730235Application Date: 2022-04-27
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Publication No.: US11864477B2Publication Date: 2024-01-02
- Inventor: Yu-Chao Lin , Tung-Ying Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H10N70/00 ; H10N70/20
Abstract:
Provided are a memory cell and a method of forming the same. The memory cell includes a bottom electrode, a top electrode, and a storage element layer. The storage element layer is disposed between the bottom and top electrodes. The storage element layer has a first inclined sidewall, the top electrode has a second inclined sidewall, and an angle of the first inclined sidewall is greater than an angle of the second inclined sidewall. A semiconductor device having the memory cell is also provided.
Public/Granted literature
- US20220255000A1 MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE SAME Public/Granted day:2022-08-11
Information query
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