Invention Grant
- Patent Title: Method of manufacturing an integrated capacitor structure using a donor substrate for transferring layers to a receiver substrate
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Application No.: US16445274Application Date: 2019-06-19
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Publication No.: US11865580B2Publication Date: 2024-01-09
- Inventor: Gwenael Le Rhun
- Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR 55592 2018.06.22
- Main IPC: B06B1/06
- IPC: B06B1/06 ; H01L49/02 ; H10B53/30 ; H10N15/10 ; H10N30/06 ; H10N30/073 ; H10N30/085 ; H10N30/853 ; H10N30/082 ; H10N30/87

Abstract:
A method for producing an at least partially transparent device is provided, including producing, on a first substrate, first and second separation layers one against the other; producing, on the second separation layer, an at least partially transparent functional layer; making the functional layer integral with a second at least partially transparent substrate; forming a mechanical separation at an interface between the separation layers; removing the second separation layer; producing a first at least partially transparent electrode layer on the functional layer; where the materials of the stack are chosen such that the interface between the separation layers corresponds to that, among all the interfaces of the stack, having the lowest adherence force.
Public/Granted literature
- US20200001327A1 METHOD OF FORMING OF A SEMI-TRANSPARENT DEVICE INTEGRATING A CAPACITOR STRUCTURE Public/Granted day:2020-01-02
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