Invention Grant
- Patent Title: Memory device, storage device including the same and method of operating the storage device
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Application No.: US17240152Application Date: 2021-04-26
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Publication No.: US11868645B2Publication Date: 2024-01-09
- Inventor: Hosung Ahn , Younsoo Cheon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20200132979 2020.10.14
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A method of operating a controller for controlling a memory device that comprises a plurality of memory cell blocks including outputting block address information based on reliability information for each of the memory cell blocks, providing a patrol read command to the memory device, and controlling the memory device to perform the patrol read operation in response to the patrol read command wherein the block address information comprises an order of the patrol read operation for the memory cell blocks based on the reliability information may be provided.
Public/Granted literature
- US20220113896A1 MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME AND METHOD OF OPERATING THE STORAGE DEVICE Public/Granted day:2022-04-14
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