Provided are a method for testing a memory, an apparatus for testing a memory, a computer-readable storage medium, and an electronic device, which relate to the field of integrated circuit technology. The method for testing a memory includes: writing first data into each of memory cells of a memory array; enabling a data mask mode, and writing second data into each of the memory cells of the memory array; enabling a leakage mode, and writing the first data into a memory cell corresponding to a column under test of the memory array; and after preset leakage time, disabling the leakage mode, and reading data from the memory cell corresponding to the column under test for testing, to determine whether there are at least two columns simultaneously turned on in the memory array. This method may test whether a row decoder fails.