A exemplary semiconductor device includes a first gate structure overlying a surface of the semiconductor body, the first gate structure being silicided. A second gate structure overlies the surface of the semiconductor body and not being silicided. An oxide layer overlies the second gate structure and extends toward the first gate structure. A silicon nitride region is laterally spaced from the second gate structure and overlies a portion of the oxide layer between the first gate structure and the second gate structure.