Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
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Application No.: US17030488Application Date: 2020-09-24
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Publication No.: US11869777B2Publication Date: 2024-01-09
- Inventor: Fumihiro Kamimura , Masatoshi Kasahara , Teruomi Minami , Ikuo Sunaka
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Venjuris, P.C.
- Priority: JP 19177637 2019.09.27
- Main IPC: H01L21/67
- IPC: H01L21/67 ; B08B3/04 ; B08B7/00 ; H01L21/02 ; H01L21/687

Abstract:
A substrate processing method includes: increasing a temperature of a substrate by heating the substrate; after the increasing the temperature of the substrate, forming a liquid film of a pre-wetting liquid on a first surface of the substrate by supplying the pre-wetting liquid to the first surface of the substrate while heating and rotating the substrate at a first rotational speed; after the forming the liquid film, processing the first surface of the substrate with a chemical liquid by supplying the chemical liquid to the first surface of the substrate while heating and rotating the substrate at a second rotational speed that is lower than the second rotational speed; and after the processing the first surface of the substrate, decreasing the temperature of the substrate.
Public/Granted literature
- US20210098271A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2021-04-01
Information query
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