Invention Grant
- Patent Title: Method of manufacturing semiconductor device and non-transitory computer-readable recording medium
-
Application No.: US17576549Application Date: 2022-01-14
-
Publication No.: US11869785B2Publication Date: 2024-01-09
- Inventor: Tomoyuki Miyada , Hajime Abiko , Junichi Kawasaki , Tadashi Okazaki
- Applicant: Kokusai Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Kokusai Electric Corporation
- Current Assignee: Kokusai Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Edell, Shapiro & Finnan, LLC
- Main IPC: H01L21/67
- IPC: H01L21/67 ; C23C8/10 ; C23C16/458 ; H01L21/673 ; H01L21/677 ; H01L21/66

Abstract:
Described herein is a technique capable of detecting a substrate state without contacting the substrate. According to one aspect of the technique, there is provided (a) loading a substrate retainer, where a plurality of substrates is placed, into a reaction tube; (b) processing the plurality of the substrates by supplying a gas into the reaction tube; (c) unloading the substrate retainer out of the reaction tube after the plurality of the substrates is processed; and (d) detecting the plurality of the substrates placed on the substrate retainer after the substrate retainer is rotated by a first angle with respect to a transferable position, wherein the plurality of the substrates is transferable to/from the substrate retainer in the transferable position.
Public/Granted literature
- US20220139745A1 Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium Public/Granted day:2022-05-05
Information query
IPC分类: