Invention Grant
- Patent Title: Semiconductor storage device
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Application No.: US17190886Application Date: 2021-03-03
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Publication No.: US11869838B2Publication Date: 2024-01-09
- Inventor: Taisuke Sato
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 20094728 2020.05.29
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/528 ; H10B41/27 ; H10B43/27

Abstract:
A semiconductor storage device includes: a substrate; a stacked body; a columnar body; and a single-crystalline body. The stacked body includes a cell array region where first insulating layers and conductive layers are alternately stacked. The columnar body has a first columnar body. The first columnar body includes a semiconductor body and a charge accumulation film provided between one of a plurality of the conductive layers and the semiconductor body, and is present in the cell array region. The conductive layer that surrounds an outer periphery of the single-crystalline body and that is closest to the substrate among the conductive layers is a first layer, and that the conductive layer that surrounds an outer periphery of the first columnar body and that is closest to the substrate among the conductive layers is a second layer.
Public/Granted literature
- US20210375752A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2021-12-02
Information query
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