Invention Grant
- Patent Title: Semiconductor package device and semiconductor wiring substrate thereof
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Application No.: US17823063Application Date: 2022-08-29
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Publication No.: US11869845B2Publication Date: 2024-01-09
- Inventor: Sheng-Fan Yang , Wei-Chiao Wang , Yi-Tzeng Lin
- Applicant: GLOBAL UNICHIP CORPORATION , TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: GLOBAL UNICHIP CORPORATION,TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: GLOBAL UNICHIP CORPORATION,TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu; TW Hsinchu
- Agency: CKC & Partners Co., LLC
- Priority: TW 1119707 2022.05.26
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/538 ; H01L25/065 ; H01L23/498 ; H01L23/552 ; H01L23/00

Abstract:
A semiconductor wiring substrate includes a first circuit layer, a second circuit layer and a first dielectric layer. The first circuit layer includes a plurality of first signal traces and a plurality of first ground traces, wherein the first signal traces and the first ground traces are alternatively arranged on the first circuit layer, and one of the first signal traces is spaced at a first spacing from adjacent one of the first ground traces. The first dielectric layer is between the first circuit layer and the second circuit layer and has a first thickness in an arrangement direction of the first circuit layer, the first dielectric layer and the second circuit layer, wherein the first spacing substantially ranges from 0.78 to 1.96 times the first thickness.
Public/Granted literature
- US20230387030A1 SEMICONDUCTOR PACKAGE DEVICE AND SEMICONDUCTOR WIRING SUBSTRATE THEREOF Public/Granted day:2023-11-30
Information query
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