Invention Grant
- Patent Title: Heterogeneous dielectric bonding scheme
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Application No.: US17457704Application Date: 2021-12-06
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Publication No.: US11869869B2Publication Date: 2024-01-09
- Inventor: Chen-Hua Yu , Wen-Chih Chiou , Ku-Feng Yang , Ming-Tsu Chung
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00

Abstract:
A method includes putting a first package component into contact with a second package component. The first package component comprises a first dielectric layer including a first dielectric material, and the first dielectric material is a silicon-oxide-based dielectric material. The second package component includes a second dielectric layer including a second dielectric material different from the first dielectric material. The second dielectric material comprises silicon and an element selected from the group consisting of carbon, nitrogen, and combinations thereof. An annealing process is performed to bond the first dielectric layer to the second dielectric layer.
Public/Granted literature
- US20220344301A1 Heterogeneous Dielectric Bonding Scheme Public/Granted day:2022-10-27
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