Invention Grant
- Patent Title: Method for defining a gap height within an image sensor package
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Application No.: US16948792Application Date: 2020-10-01
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Publication No.: US11869912B2Publication Date: 2024-01-09
- Inventor: Yu-Te Hsieh
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
According to an aspect, a method for fabricating an image sensor package to define a gap height includes coupling an image sensor die to a substrate, forming a plurality of pillar members on the image sensor die, dispensing a bonding material on the image sensor die, contacting a transparent member with the bonding material such that a height of the pillar members defines a gap height between an active region of the image sensor die and the transparent member, and curing the bonding material to couple the transparent member to the image sensor die.
Public/Granted literature
- US20220020800A1 METHOD FOR DEFINING A GAP HEIGHT WITHIN AN IMAGE SENSOR PACKAGE Public/Granted day:2022-01-20
Information query
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